![]() ![]() Various structures have been reported for broadband sensing: applying nanowire or 2-D materials, applying polymer photodetectors, or integration of more than two materials with different bandgap wavelengths. In order to realize multicolor imaging with a single sensor, a wide spectral detection range is required for PDs. In general, three different sub-bands: 0.25 µm to 0.4 µm (UV), 0.45 µm to 1.0 µm (visible to near-IR), and 0.9 µm to 1.7 µm (near-IR to short-wavelength IR) are detected by GaN-, Si-, and InGaAs- based PDs, respectively. Through imaging in a wide spectral range including ultraviolet (UV) and infrared (IR) light, more advanced image processing is possible in many fields such as night recognition, deep-learning image recognition, and hyperspectral imaging. Recently, broadband imaging beyond the visible spectrum is of great interest. Photodetectors (PDs) are an essential part of the core future technologies such as the Internet of Things (IoT) or autonomous driving. © 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement 1. Furthermore, the PD has shown a rapid rise time of 1.44 µs from the transient photoresponse measurement. The value of EQE was 35% at 300 nm and exceeded 50% in the IR region. From the photoresponse measurement, the PD has shown uniformly high external quantum efficiency (EQE) over a spectral range of 300 nm to 1700nm. The fabricated PD array has shown uniform electrical characteristics and good rectifying behaviors. The PD was formed by deposition of a 5 nm-thick Au layer on the n-type GaSb substrate and subsequent mesa array formation. We proposed an Au/ n-GaSb Schottky photodetector (PD) array with a wide spectral range from ultraviolet (UV) to short-wavelength infrared (SWIR).
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